Varistor Application of Cr-doped ZnO-Sb2O3Ceramics
نویسندگان
چکیده
منابع مشابه
nthesis of ZnO nanomaterials for varistor devices
D P S ( I p i ( e M a M D acquiring more than V2 million published several scientic articles nals, has contributed four book ch than twenty international confer een international invited talks number of national awards f including the ‘Industrial Technolo prise Ireland for commercialising applications. Center for Research in Engineering Surface Dublin Institute of Technology, Kevin Stre pill...
متن کاملOptimization of Bi2O3, TiO2, and Sb2O3 Doped ZnO-Based Low-Voltage Varistor Ceramic to Maximize Nonlinear Electrical Properties
In ZnO-based low voltage varistor, the two essential features of microstructure determining its nonlinear response are the formation Bi-enriched active grain boundaries as well as a controlled ZnO grain size by secondary spinel-type phases. Besides, the microstructure and phase composition are strongly affected by the dopant concentration during sintering process. In this study, the optimal dop...
متن کاملRoom-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array
A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Z...
متن کاملPlasmonic Ge-doped ZnO nanocrystals.
We present the first colloidal synthesis of Ge-doped ZnO nanocrystals, which are produced by a scalable method that uses only air and moisture stable precursors. The incorporation of tetravalent Ge ions within ZnO nanocrystals generates a surface plasmon resonance in the near-mid infrared, and induces a change in morphology, from isotropic spheroidal nanocrystals to rod-like, elongated structur...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2010
ISSN: 1226-7945
DOI: 10.4313/jkem.2010.23.11.854